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| AP9971GD RoHS-compliant Product Advanced Power Electronics Corp. Low On-resistance Fast Switching Speed PDIP-8 Package G2 D1 D1 D2 D2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60V 50m 5A PDIP-8 S2 G1 S1 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1 3 Rating 60 +25 5 3.2 20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 62.5 Unit /W Data and specifications subject to change without notice 1 200809223 AP9971GD Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=5A VGS=4.5V, ID=2.5A VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=60V, VGS=0V VGS=+25V ID=5A VDS=48V VGS=10V VDS=30V ID=5A RG=3.3,VGS=10V RD=6 VGS=0V VDS=25V f=1.0MHz Min. 60 1 - Typ. 0.06 7 32.5 4.9 8.8 9.6 10 30 5.5 1560 156 110 Max. Units 50 60 3 1 25 +100 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Leakage Current (Tj=70 C) VDS=48V ,VGS=0V Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=1.6A, VGS=0V IS=5A, VGS=0V, dI/dt=100A/s Min. - Typ. 29.2 48 Max. Units 1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3. Mounted on 1 in2 copper pad of FR4 board ;90/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9971GD 35 35 T A =25 C 30 o ID , Drain Current (A) 25 ID , Drain Current (A) 10V 6.0V 4.5V 30 T A =150 C o 25 10V 6.0V 4.5V 20 20 15 15 10 V G =3.0V 10 V G =3.0V 5 5 0 0 1 2 3 4 5 0 0 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 52 2.0 I D =5A 48 I D =5A 1.6 T A =25 C Normalized RDS(ON) o V G =10V RDS(ON) (m ) 44 1.2 40 0.8 36 0.4 32 3 5 7 9 11 0.0 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.4 100 2 10 VGS(th) (V) 1.3 1.5 IS (A) T j =150 o C 1 T j =25 o C 1.6 1.2 0.1 0.8 0.01 0.1 0.3 0.5 0.7 0.9 1.1 0.4 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9971GD 14 10000 f=1.0MHz I D =5A 12 VGS , Gate to Source Voltage (V) 10 8 6 C (pF) V DS =48V V DS =38V V DS =30V C iss 1000 100 4 C oss C rss 2 0 0 5 10 15 20 25 30 35 40 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty foctor=0.5 Normalized Thermal Response (Rthja) 10 0.2 1ms ID (A) 1 0.1 0.1 0.05 10ms 100ms 0.02 0.01 PDM 0.01 Single Pulse t T Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=90/W 0.1 1s T A =25 C Single Pulse 0.01 o DC 10 100 1000 0.001 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : PDIP-8 SYMBOLS MIN Millimeters NOM MAX A A1 E 3.60 0.38 2.90 0.36 1.10 0.76 0.20 9.00 6.10 7.62 8.30 3.18 4.50 ---3.95 0.46 1.45 0.98 0.28 9.60 6.65 7.94 9.65 2.540 BSC ---- 5.40 ---5.00 0.56 1.80 1.20 0.36 10.20 7.20 8.26 11.00 ---- A D B2 A2 A1 L A2 B B1 B2 C D E E1 B E1 B1 e E2 e L C 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. E2 Part Marking Information & Packing : PDIP-8 9971GD YWWSSS Part Number Package Code meet Rohs requirement for low voltage MOSFET only Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 5 |
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